1MBI400U4-120 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.5Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.5Ω, Tj=125^oC
10000
1000
100
toff
ton
tr
tf
10
0
200
400
600
800
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=±15V, Tj=25^oC
10000
ton
1000
toff
tr
100
tf
10
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=400A, VGE=±15V, Tj=125^oC
70
Eoff
60
50
Eon
40
30
20
Err
10
0
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
1000
100
ton
toff
tr
tf
10
0
200
400
600
800
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.5Ω
70
Eoff(125^oC)
60
50
40
EEorrf(f1(2255^ooCC))
30
Eon(125^oC)
20
Err(25^oC)
Eon(25^oC)
10
0
0 100 200 300 400 500 600 700 800
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.5Ω, Tj <= 125^oC
1000
800
600
400
200
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6039
10
13
H04-004-03a