7MBR150VN120-50 Datasheet, PDF (6/8 Pages) Fuji Electric – IGBT MODULE

7MBR150VN120-50
IGBT Modules
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25^oC / chip
200
V_GE=20V
15V
12V
150
100
10V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V_CE[V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
200
Tj=25°C
Tj=150°C
150
Tj=125°C
100
50
0
0
1
2
3
4
5
Collector-Emitter voltage: V_CE[V]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
V_GE=0V, f= 1MHz, Tj= 25^oC
100.0
Cies
10.0
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150^oC / chip
200
V_GE=20V
15V
150
12V
100
10V
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V_CE[V]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25^oC / chip
8
6
4
2
Ic=200A
Ic=100A
Ic=50A
0
5
10
15
20
25
Gate - Emitter voltage: V_GE [V]
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Dynamic gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
V_GE
1.0
Cres
Coes
0.1
0
10
20
30
Collector - Emitter voltage: V_CE [V]
6
V_CE
0
200
400
600
800 1000
Gate charge: Qg [nC]