7MBR150VN120-50 Datasheet, PDF (3/8 Pages) Fuji Electric – IGBT MODULE

7MBR150VN120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25^oC / chip
300
V_GE=20V
15V
250
12V
200
150
10V
100
50
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V_CE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V_GE=15V / chip
300
Tj=25°C
250
Tj=150°C
200
Tj=125°C
150
100
50
0
0
1
2
3
4
5
Collector current: I_C [A]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V_GE=0V, f= 1MHz, Tj= 25^oC
100.0
Cies
10.0
1.0
Cres
Coes
0.1
0.0
0
10
20
30
Collector - Emitter voltage: V_CE [V]
3
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150^oC / chip
300
V_GE=20V
15V
250
12V
200
150
10V
100
50
0
0
8V
1
2
3
4
5
Collector-Emitter voltage: V_CE[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25^oC / chip
8
6
4
Ic=300A
2
Ic=150A
Ic=75A
0
5
10
15
20
25
Gate - Emitter voltage: V_GE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
V_GE
V_CE
0 200 400 600 800 1000 1200 1400 1600
Gate charge: Qg [nC]