7MBR150VN120-50 Datasheet, PDF (4/8 Pages) Fuji Electric – IGBT MODULE

7MBR150VN120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 125°C
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 150°C
10000
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
Collector current: IC [A]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
10000
1000
toff
ton
tr
100
tf
10
0.1
1.0
10.0
Gate resistance : Rg [Ω]
100.0
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V
20
18
Eon(150°C)
16
Eon(125°C)
14
Eoff(150°C)
12
Eoff(125°C)
10
Err(150°C)
8
Err(125°C)
6
4
2
0
0
1
10
100
Gate resistance : Rg [Ω]
1000
100
toff
ton
tr
tf
10
0
100
200
300
400
Collector current: IC [A]
[ Inverter ] a
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.8Ω
30
Eoff(150°C)
Eoff(125°C)
Eon(150°C)
20
Eon(125°C)
Err(150°C)
Err(125°C)
10
0
0
100
200
300
400
Collector current: IC [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.8Ω ,Tj <= 125°C
400
300
200
RBSOA
(Repetitive pulse)
100
0
0
400
800
1200
Collector-Emitter voltage : V_CE [V]
4