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| YG855C12R Datasheet, PDF (5/6 Pages) Fuji Electric – Schottky Barrier Diode | |||
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YG855C12R
1000
Surge Current Ratings (max.)
FUJI Diode
http://www.fujisemi.com
100
10
1
10
100
1000
tTime (ms) Sinewave
Transient Thermal Impedance (max.)
101
Rth(j-c):2.5°C/W
100
10-1
10-2
10-3
10-2
10-1
100
101
102
t Time (sec)
5
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