YG855C12R Datasheet, PDF (4/6 Pages) Fuji Electric – Schottky Barrier Diode

YG855C12R
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
100
90
80
360°
DC
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
70
I₀
λ
VR=60V
Square wave λ=60°
60
0
5
10
15
20
25
30
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)
Surge Capability (max.)
100
10
1
10
100
Number of Cycles at 50Hz
4