YG855C12R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG855C12R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
Forward Power Dissipation (max.)
16
360°
14
I₀
λ
12
10 Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
8
Square wave λ=180°
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
Io Average Output Current (A)
FUJI Diode
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Reverse Characteristic (typ.)
10⁵
Tj=150°C
10⁴
Tj=125°C
10³
Tj=100°C
10²
10¹
Tj= 25°C
10⁰
10^-1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
4.0
360°
3.5
VR
α
3.0
DC
2.5
2.0
1.5
α=180°
1.0
0.5
0.0
0
20
40
60
80
100
120
140
VR Reverse Voltage (V)
3