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| YG812S04R Datasheet, PDF (5/6 Pages) Fuji Electric – Schottky Barrier Diode | |||
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YG812S04R
102
Transient Thermal Impedance (max.)
FUJI Diode
http://www.fujisemi.com
101
Rth(j-c):2.5°C/W
100
10-1
10-3
10-2
10-1
100
101
102
T Time (s)
5
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