YG812S04R Datasheet, PDF (4/6 Pages) Fuji Electric – Schottky Barrier Diode

YG812S04R
Current Derating (Io-Tc) (max.)
160
10000
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (typ.)
150
140
130
120
110
100
360°
DC
Sine wave λ=180°
Square wave λ=180°
Square wave λ=120°
1000
Square wave λ=60°
90
I₀
λ
VR=22.5V
V
80
0
2
4
6
8
10
12
14
16
100
IO Average Output Current (A)
ă:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
1
10
100
VR Reverse Voltage (V)
Surge Capability (max.)
1000
100
10
1
10
100
Number of Cycles at 50Hz
4