YG812S04R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG812S04R
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
Tj=150°C
10²
Tj=125°C
10¹
Tj=100°C
10⁰
10^-1
Tj=25°C
10^-2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VF Forward Voltage (V)
Forward Power Dissipation (max.)
14
360°
12
I₀
λ
10
8
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
6
Square wave λ=180°
DC
4
2
Per 1element
0
0
2
4
6
8
10
IO Average Forward Current (A)
10^-3
0
10
20
30
40
50
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
10
360°
DC
VR
α
8
6
α =180°
4
2
0
0
5
10
15
20
25
30
35
40
45
VR Reverse Voltage (V)
3