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| FMV20N60S1 Datasheet, PDF (5/7 Pages) Fuji Electric – rN-Channel enhancement mode power MOSFET | |||
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FMV20N60S1
Typical Coss stored energy
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
VDS [V]
Typical Gate Charge Characteristics
VGS= f(Qg): ID=20A, Vdd=480V, Tch=25°C
10
8
6
4
2
0
0
10
20
30
40
50
60
Qg [nC]
Transient Thermal Impedance
Zth(ch-c)= f(t): D=0
101
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Typical Switching Characteristics vs. ID Tch=25°C
t= f(ID): Vdd=400V, VGS=10V/0V, RG=27â¦, L=500uH
103
tr
102
td(off)
tf
td(on)
101
100
101
102
ID [A]
Maximum Avalanche Energy vs. startingTch
E(AV)= f(starting Tch): VCC=60V, I(AV)<=6.6A
500
IAS=2A
450
400
350
300
250 IAS=4A
200
IAS=6.6A
150
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
5
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