FMV20N60S1 Datasheet, PDF (1/7 Pages) Fuji Electric – rN-Channel enhancement mode power MOSFET

FMV20N60S1
Super J-MOS series
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Outline Drawings [mm]
TO-220F(SLS)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Connection
1 Gate
2 Drain
3 Source
DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Symbol
VDS
VDSX
ID
Pulsed Drain Current
IDP
Gate-Source Voltage
VGS
Characteristics
600
600
±20
±12.6
±60
±30
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
6.6
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
EAS
dVDS/dt
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Isolation Voltage
Viso
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2A, L=216mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.
472.2
50
15
100
2.16
53
150
-55 to +150
2
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
kVrms
Remarks
VGS=-30V
Tc=25°C
Tc=100°C
Note*1
Note*1
Note *2
Note *3
VDS≤ 600V
Note *4
Note *5
Ta=25°C
Tc=25°C
t=60sec,f=60Hz
1