FMV20N60S1 Datasheet, PDF (3/7 Pages) Fuji Electric – rN-Channel enhancement mode power MOSFET

FMV20N60S1
Allowable Power Dissipation
PD= f(TC)
60
40
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Safe Operating Area
ID= f(VDS):Duty= 0(Single pulse), TC=25°C
10²
t=
1µs
10¹
10µs
100µs
10⁰
20
0
0
25
50
75
100
125
150
TC[°C]
Typical Output Characteristics
ID= f(VDS): 80µs pulse test, Tch=25°C
60
55
10V _20V
50
45
8V
6.5V
40
35
6V
30
25
5.5V
20
15
5V
10
5
VGS=4.5V
0
0
5
10
15
20
25
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80s pulse test, Tch=25°C
0.6
4.5V 5V
5.5V
6V 6.5V 8V
10V
0.5
0.4
VGS=20V
0.3
0.2
0.1
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10^-1
10⁰
10¹
10²
VDS [V]
Typical Output Characteristics
ID= f(VDS): 80µs pulse test, Tch=150°C
40
1ms
10³
35
8V 10V 20V
30
6V
25
5.5V
20
15
5V
10
4.5V
5
VGS=4V
0
0
5
10
15
20
25
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80s pulse test, Tch=150°C
4V 4.5V
5V
1.4
1.2
5.5V
1.0
6V
8V10V
0.8
VGS=20V
0.6
0.4
0.2
0.0
0
5 10 15 20 25 30 35 40 45 50 55 60
ID [A]
3
0.0
0
5
10 15 20 25 30 35 40
ID [A]