1MBH25D-120 Datasheet, PDF (4/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V _GE< 15V, T_j< 125°C, R_G> 8.2Ω
60
50
40
30
20
10
0
0 200 400 600 800 1000 1200 1400
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
60
T_j=125°C 25°C
50
40
30
20
10
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Forward Voltage : V_F [V]
300
250
200
150
100
50
0
5
Typical Short Circuit Capability
V _CC= 8 0 0 V , R _G=8.2Ω , T_j=125°C
60
t_SC
I_SC
40
20
0
10
15
20
25
Gate Voltage : V_GE [V]
1000
800
Reverse Recovery Characteristics vs. ^-di/_dt
V _R=200V, I_F=25A, T_j=125°C
25
I_rr
20
600
15
400
200
10
t_rr
5
0
0
0
50
100 150 200 250 300
-di_{/dt [ A / µ s e c ]}
10¹
10⁰
1 0^-1
1 0^-2
1 0^-4
Transient Thermal Resistance
FWD
IGBT
1 0^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]