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1MBH25D-120 Datasheet, PDF (2/5 Pages) Fuji Electric – Fuji Discrete Package IGBT
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Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
60
V GE= 2 0 V , 1 5 V
50
12V
40
10V
30
20
10
0
0
8V
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j=25°C
12
10
8
6
IC=
4
50A
25A
2
12.5A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
Switching Time vs. Collector Current
V CC= 6 0 0 V , R G=8.2Ω , VGE=±15V, Tj=25°C
1000
toff
ton
tf
tr
100
Collector Current vs. Collector-Emitter Voltage
T j=125°C
60
V GE= 2 0 V , 1 5 V
12V
40
10V
20
8V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 1 2 5 ° C
12
10
8
6
4
IC=
50A
25A
2
12.5A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
Switching Time vs. Collector Current
V CC= 6 0 0 V , R G=8.2Ω , VGE=±15V, Tj=125°C
1000
t off
tf
ton
tr
100
10
0
10
20
30
40
Collector Current : IC [A]
10
0
10
20
30
40
50
Collector Current : IC [A]
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