1MBH25D-120 Datasheet, PDF (3/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Switching Time vs. R_G
V _CC=600V, I_C=25A, V _GE=±15V, T_j=25°C
t_off
1000
t_on
t_r
t_f
100
10
0
20
40
60
80
100
Gate Resistance : R_G [Ω ]
10000
Capacitance vs. Collector-Emitter Voltage
T _j=25°C
C _ies
1000
100
C _oes
C _res
10
0
5
10
15
20
25
30
35
Reverse Recovery Time vs. Forward Current
300
V _R= 2 0 0 V , ^-di/_dt= 1 0 0 A / µ s e c
125°C
200
25°C
100
0
0
10
20
30
40
50
Forward Current : I_F [A]
Switching Time vs. R_G
V _CC=600V, I_C=25A, V _GE=±15V, T_j=125°C
t_off
1000
t_on
t_f
t_r
100
0
20
40
60
80
100
Gate Resistance : R_G [Ω ]
1000
800
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V=
CC
400V
600V
800V
20
600
15
400
10
200
5
0
0
0 50 100 150 200 250 300 350 400 450
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R=200V, ^-di/_dt=100A/µsec
16
14
12
125°C
10
8
25°C
6
4
2
0
0
10
20
30
40
50
Forward Current : I_F [A]