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| FMV24N25G Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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FMV24N25G
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75
Tch [ËC]
100 125 150
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
104
Ciss
103
Coss
102
101
Crss
100
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10â¦
tf
td(off)
102
td(on)
tr
101
100
10-1
100
101
ID [A]
3
FUJI POWER MOSFET
http://www.fujisemi.com
Typical Gate Charge Characteristics
VGS=f(Qg):ID=24.0A, Tch=25ËC
14
12
10
Vcc=72V
8
6
4
2
0
0
10
20
30
40
50
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µspulsetest, Tch=25ËC
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(startingTch):Vcc=48V, I(AV)<=24.0A
600
500
I =24.0A
AS
400
I =14.4A
AS
300
I =9.6A
200 AS
100
0
0
25
50
75
100
125
150
starting Tch [ËC]
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