FMV24N25G Datasheet, PDF (1/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV24N25G
Super FAP-G series
http://www.fujisemi.com
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
dVds/dt
dV/dt
Maximum Power Dissipation
PD
Tch
Operating and Storage Temperature range
Tstg
Isolation
VISO
Characteristics
250
220
±24
±96
±30
24
192
20
5
2.16
65
150
-55 to +150
2
Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=250V, VGS=0V
VDS=200V, VGS=0V
VGS=±30V, VDS=0V
ID=12A, VGS=10V
ID=12A, VDS=25V
VDS=75V
VGS=0V
f=1MHz
Vcc=72V
VGS=10V
ID=12A
RG=10Ω
Vcc=72V
ID=24A
VGS=10V
L=560uH, Tch=25°C
IF=24A, VGS=0V, Tch=25°C
IF=24A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
250
3.0
-
-
-
-
8
-
-
-
-
-
-
-
-
-
-
24
-
-
-
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=A, L=560uH, Vcc=48V, RG=50Ω,
EAS limited by maximum channel temperature and avalanche current.
Note *3 : IF≤-ID, -di/dt=50A/µs, Vcc≤BVDSS, Tch≤150°C.
Symbol
Rth (ch-c)
Rth (ch-a)
min.
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
KVrms
Remarks
VGS = -30V
Note*1
Note*2
VDS=≤200V
Note*3
Ta=25°C
Tc=25°C
t=60sec, f=60Hz
typ.
-
-
-
-
10
0.11
16
1150
200
13
27
22
35
14
36
14.5
11.5
-
1.0
0.23
2.5
max.
-
5.0
25
250
100
0.13
-
1725
300
19.5
40.5
33
52.5
21
54
21.8
17.3
-
1.5
-
-
Unit
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
typ.
max.
Unit
1.923
°C/W
58.0
°C/W
1