FMV24N25G Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV24N25G
AllowablePowerDissipation
PD=f(Tc)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Tc [˚C]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
FUJI POWER MOSFET
http://www.fujisemi.com
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
50
20V
10V
8.0V
40
30
7.5V
20
7.0V
6.5V
10
VGS=6.0V
0
0
2
4
6
8
10
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test, VDS=25V, Tch=25˚C
10
10
1
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
0.30
VGS=6.0V _6.5V
7.0V
0.25
7.5V
0.20
8.0V
0.15
10V
20V
0.1
0.1
1
10
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.0A, VGS=10V
0.4
0.3
0.2
max.
0.1
typ.
0.10
10
20
30
40
ID [A]
0.0
-50 -25
0
25 50 75 100 125 150
Tch [˚C]
2