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| FMV10N80E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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FMV10N80E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.0A, VGS=10V
3.5
3.0
2.5
2.0
1.5
m ax.
1.0
typ.
0.5
0.0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A, Tch=25°C
14
Vcc= 160V
12
400V
640V
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test, Tch=25°C
100
10
1
0.1
FUJI POWER MOSFET
http://www.fujisemi.com
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
8
7
6
5
max.
typ.
4
min.
3
2
1
0
-50 -25 0
25 50 75
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
104
100 125 150
Ciss
103
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V, VGS=10V, RG=24â¦
103
tf
td(off)
102
td(on)
tr
101
0.01
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
102
VSD [V]
ID [A]
3
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