FMV10N80E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV10N80E
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25°C
20
20V
10V
15
7.0V
10
6.0V
5
V GS=5 .5 V
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
http://www.fujisemi.com
Safe Operating Area
I_D=f(V_DS):Duty=0(Singlepulse), Tc=25°c
10²
t=
1µs
10¹
10µs
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P
D
t
10^-2
10^-1
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25°C
2.4
VGS=5.5V
6V
2.0
1.6
7V
10V
20V
1.2
0.8
0
2
4
6
8 10 12 14 16 18
ID [A]
2