FMV10N80E Datasheet, PDF (1/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV10N80E
Super FAP-E³ series
http://www.fujisemi.com
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Operating and Storage Temperature range
Tch
Tstg
Characteristics
800
800
±10
±40
±30
10
572.4
8.5
2.1
100
2.16
85
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Drain-Source Crossover Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QSW
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=800V, VGS=0V
VDS=640V, VGS=0V
VGS=±30V, VDS=0V
ID=5.0A, VGS=10V
ID=5.0A, VDS=25V
VDS=25V
VGS=0V
f=1MHz
Vcc=600V
VGS=10V
ID=5.0A
RG=24Ω
Vcc=450V
ID=10A
VGS=10V
See Fig.5
L=4.20mH, Tch=25°C
IF=10A, VGS=0V, Tch=25°C
IF=10A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Tch=25°C
Tch=125°C
min.
800
3.5
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
typ.
-
4.0
-
-
10
0.9
10
1650
165
11
34
32
105
30
50
14
6
17
-
0.90
1.8
15
max.
-
4.5
25
250
100
1.1
-
2500
250
17
51
48
160
45
75
21
9
26
-
1.35
-
-
Unit
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG=10Ω,
EAS limited by maximum channel temperature and avalanche current.
Test Conditions
Channel to case
Channel to ambient
min.
typ.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C.
max.
0.862
50.0
Unit
°C/W
°C/W
1