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| FML12N50ES Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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FML12N50ES
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A, VGS=10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
max.
0.6
typ.
0.4
0.2
0.0
-50 -25 0
25 50 75
Tch [ËC]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A, Tch=25ËC
14
12
Vcc= 100V
250V
10
400V
8
6
4
2
0
0
10 20 30 40 50 60 70 80
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test, Tch=25ËC
100
10
1
FUJI POWER MOSFET
http://www.fujisemi.com
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS, ID=250µA
8
7
6
5
4
max.
typ.
3
min.
2
1
0
-50 -25 0
25 50 75
Tch [ËC]
100 125 150
Typical Capacitance
C=f(VDS):VGS=0V, f=1MHz
104
103
Ciss
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=15â¦
103
td(off)
102
tf
td(on)
tr
101
0.1
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
102
VSD [V]
ID [A]
3
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