FML12N50ES Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FML12N50ES
Allowable Power Dissipation
PD=f(Tc)
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [˚C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test, Tch=25˚C
30
25
10V
8.0V
20
7.0V
FUJI POWER MOSFET
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Safe Operating Area
I =f(V ):Duty=0(Single pulse), Tc=25˚C
D
DS
10²
10¹
t=
1µs
10µs
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10^-1
10⁰
10¹
10²
10³
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test, VDS=25V, Tch=25˚C
100
10
15
6.5V
10
VGS=6.0V
5
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80µs pulse test, VDS=25V, Tch=25˚C
100
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test, Tch=25˚C
0.9
VGS=6.0V
6.5V
0.8
10
0.7
7V
8V10V
0.6
20V
1
0.5
0.1
0.1
1
ID [A]
10
0.4
0.3
100
0
2
5
10 _{ID [A]} 15
20