FML12N50ES Datasheet, PDF (1/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FML12N50ES
Super FAP-E³ series
http://www.fujisemi.com
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.7±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Outline Drawings [mm]
TFP
9.0± 0.2
7.0± 0.2
4
0.4± 0.1
2.0 2.0 2.5
1.5
12
3
1.0±0.2
1.0±0.2
3.6±0.2
Solder
Plating
(4.0) (3.2)
(0.8)
Equivalent circuit schematic
4D
G1
S1 2
3 S2
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
IDP
VGS
IAR
EAS
EAR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Tch
Operating and Storage Temperature range
Tstg
Characteristics
500
500
±12
±48
±30
12
460.8
18
6.3
100
1.44
180
150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Drain-Source Crossover Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS (th)
IDSS
IGSS
RDS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QSW
QGD
IAV
VSD
trr
Qrr
Conditions
ID=250µA, VGS=0V
ID=250µA, VDS=VGS
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±30V, VDS=0V
ID=6A, VGS=10V
ID=6A, VDS=25V
VDS=25V
VGS=0V
f=1MHz
Vcc=300V
VGS=10V
ID=6A
RG=15Ω
Vcc=250V
ID=12A
VGS=10V
Tch=25°C
Tch=125°C
L=2.44mH, Tch=25°C
IF=12A, VGS=0V, Tch=25°C
IF=12A, VGS=0V
-di/dt=100A/µs, Tch=25°C
min.
500
3.2
-
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
12
-
-
-
typ.
-
3.7
-
-
10
0.427
9
1400
160
11.5
31
18
83
16
43
13
6
14
-
0.86
0.37
5.0
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG=10Ω,
EAS limited by maximum channel temperature and avalanche current.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Test Conditions
Channel to case
Channel to Ambient
min.
typ.
Channel to Ambient Note*6
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C.
Note *6 : Surface mounted on 1000mm², t=1.6mm FR-4 PCB (Drain pad area : 500mm²)
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
max.
-
4.2
25
250
100
0.50
-
2100
240
17.5
46.5
27
124.5
27
56
23
10
21
-
1.30
-
-
max.
0.69
87
52
Unit
V
V
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Unit
°C/W
°C/W
°C/W
1