1MBI1200U4C-120 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj=125°C
1.4
1.2
ton
1.0
0.8
toff
0.6
tr
0.4
0.2
tf
0.0
0
400
800
1200
1600
Collector current : Ic [ A ]
2000
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj= 125°C
400
350
Eoff
300
250
Eon
200
150
Err
100
50
0
0
400
800
1200 1600 2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
2800
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2400
2000
1600
1200
800
400
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj= 125°C
6.0
ton
5.0
4.0
3.0
tr
toff
2.0
1.0
tf
0.0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
1000
900
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj=125°C
Eon
800
700
600
500
400
Eoff
300
200
100
Err
0
0 2 4 6 8 10 12 14 16 18
Gate resistance : Rg [ Ω ]
3