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1MBI1200U4C-120 Datasheet, PDF (1/6 Pages) Fuji Electric – IGBT MODULE | |||
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1MBI1200U4C-120
IGBT Modules
IGBT MODULE (U series)
1200V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Ampliï¬er
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise speciï¬ed)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1200
±20
1600
1200
3200
2400
1200
2400
7350
150
-40 to +125
2500
5.75
10
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise speciï¬ed)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Symbols
Conditions
ICES
VGE = 0V, VCE = 1200V
IGES
VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 1200mA
VCE (sat)
(main terminal) VGE = 15V
VCE (sat)
IC = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Cies
VGE = 0V, VCE = 10V, f = 1MHz
ton
tr
toff
VCC = 600V, IC = 1200A
VGE = ±15V, Tj = 125°C
Rgon = 2â¦, Rgoff = 1â¦
tf
VF
(main terminal) VGE = 0V
VF
IF = 1200A
(chip)
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
trr
IF = 1200A
R lead
Characteristics
min. typ. max.
-
-
1.0
-
-
2400
5.5
6.5
7.5
-
2.08 2.25
2.28
-
-
1.90 2.05
2.10
-
-
135
-
-
0.90
-
-
0.50
-
-
0.80
-
-
0.20
-
-
1.83 2.00
-
1.93
-
-
1.65 1.80
-
1.75
-
-
0.35
-
-
0.15
-
Units
V
V
A
W
°C
°C
VAC
N·m
Units
mA
nA
V
V
nF
µs
V
µs
mâ¦
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
IGBT
FWD
Contact thermal resistance (1device)
Rth(c-f) with Thermal Compound (*3)
Note *3: This is the value which is deï¬ned mounting on the additional cooling ï¬n with thermal compound.
1
Characteristics
min. typ. max.
-
-
0.017
-
-
0.030
-
0.006
-
Units
°C/W
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