1MBI1200U4C-120 Datasheet, PDF (2/6 Pages) Fuji Electric – IGBT MODULE

1MBI1200U4C-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj=25°C ,chip
2400
VGE=20 15V 12V
2000
1600
1200
10V
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
2400
Tj=25°C Tj=125°C
2000
1600
1200
800
400
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
Cies
100
Cres
10
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
2800
Tj= 125°C, chip
2400
VGE=20V 15V
12V
2000
1600
10V
1200
800
400
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
10
8
6
4
Ic=2400A
2
Ic=1200A
Ic=600A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Tj= 25°C
1000
25
800
VCE
600
20
VGE
15
400
10
200
5
0
0
0 1000 2000 3000 4000 5000 6000
Gate charge : Qg [ nC ]
2