MRFE6S9046NR1 Datasheet, PDF (9/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 980 MHz
Z_load
f = 820 MHz
f = 980 MHz
Z_source
f = 820 MHz
V_DD = 28 Vdc, I_DQ = 285 mA, P_out = 17.8 W Avg.
f
(MHz)
Z_source
W
Z_load
W
820
5.03 - j7.29
7.68 - j3.45
840
4.46 - j6.69
6.97 - j3.53
860
4.00 - j6.11
6.42 - j3.20
880
3.62 - j5.64
5.98 - j2.87
900
3.29 - j5.18
5.65 - j2.52
920
3.03 - j4.75
5.40 - j2.17
940
2.80 - j4.36
5.21 - j1.82
960
2.61 - j3.99
5.09 - j1.47
980
2.46 - j3.64
5.03 - j1.12
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 17. Series Equivalent Source and Load Impedance — GSM EDGE Reference Design
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
9