MRFE6S9046NR1 Datasheet, PDF (1/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier
applications.
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 300 mA, P_out =
35.5 Watts CW, f = 960 MHz
Power Gain — 19 dB
Drain Efficiency — 57%
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated P_out), Designed for Enhanced
Ruggedness
• Typical P_out @ 1 dB Compression Point ] 45 Watts CW
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 285 mA,
P_out = 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 42.5%
Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc
Spectral Regrowth @ 600 kHz Offset = - 72 dBc
EVM — 2.1% rms
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRFE6S9046N
Rev. 0, 5/2009
MRFE6S9046NR1
MRFE6S9046GNR1
920 - 960 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S9046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S9046GNR1
PARTS ARE SINGLE - ENDED
RF_in/V_GS 3
2 RF_out/V_DS
RF_in/V_GS 4
1 RF_out/V_DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Table 1. Maximum Ratings
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain - Source Voltage
V_DSS
- 0.5, +66
Vdc
Gate - Source Voltage
V_GS
- 6.0, +10
Vdc
Operating Voltage
V_DD
32, +0
Vdc
Storage Temperature Range
T_stg
- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
1