MRFE6S9046NR1 Datasheet, PDF (8/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
20
0
Gain
15
−6
10
−12
5
−18
IRL
0
V_DD = 28 Vdc
−24
P_out = 9 dBm
I_DQ = 300 mA
−5
−30
650 750 850 950 1050 1150 1250 1350 1450
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
10⁹
10⁸
10⁷
10⁶
10⁵
10⁴
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 35.5 W CW, and η_D = 57%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
GSM TEST SIGNAL
−10
Reference Power
−20
−30
−40
−50
−60
−70
400 kHz
−80
600 kHz
−90
−100
−110
Center 1.96 GHz
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
200 kHz
400 kHz
600 kHz
Span 2 MHz
Figure 16. EDGE Spectrum
MRFE6S9046NR1 MRFE6S9046GNR1
8
RF Device Data
Freescale Semiconductor