MRF7S21210HR3 Datasheet, PDF (9/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
60
0
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz
−30_C _{85_C}
20 _{Channel Bandwidth}
25_C
50
−10
18 Gps
16
T_C = −30_C
14
ACPR
25_C
85_C
40
−20
30
−30
−30_C
20
−40
12
η_D
10
1
10
−50
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
−60
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
0
S21
16
−4
12
−8
8
−12
S11
4
V_DD = 28 Vdc
−16
I_DQ = 1400 mA
0
−20
1750 1850 1950 2050 2150 2250 2350 2450 2550
f, FREQUENCY (MHz)
Figure 10. Broadband Frequency Response
10⁸
10⁷
10⁶
RF Device Data
Freescale Semiconductor
10⁵
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 63 W Avg., and η_D = 29%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF7S21210HR3 MRF7S21210HSR3
9