MRF7S21210HR3 Datasheet, PDF(3/15 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF7S21210HR3 Datasheet, PDF (3/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth

IMD Symmetry @ 130 W PEP, Pout where IMD Third Order

Intermodulation ^ 30 dBc

IMDsym

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 190 W CW

Average Group Delay @ Pout = 190 W CW, f = 2140 MHz

Part - to - Part Insertion Phase Variation @ Pout = 190 W CW,

f = 2140 MHz, Six Sigma Window

1.2

Î¦

1.1

Delay

2.5

ÎÎ¦

Gain Variation over Temperature

( - 30Â°C to +85Â°C)

ÎG

0.019

Output Power Variation over Temperature

( - 30Â°C to +85Â°C)

ÎP1dB

0.011

Unit

MHz

Â°

dB/Â°C

dBm/Â°C

RF Device Data

Freescale Semiconductor

MRF7S21210HR3 MRF7S21210HSR3

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