MRF7S21150HR3_09 Datasheet, PDF (9/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 2220 MHz
Z_load
f = 2060 MHz
Z_source
f = 2060 MHz
f = 2220 MHz
V_DD = 28 Vdc, I_DQ = 1350 mA, P_out = 44 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
2.72 - j5.08
1.14 - j2.89
2080
3.10 - j5.17
1.11 - j2.75
2100
3.43 - j5.39
1.08 - j2.62
2120
3.66 - j5.74
1.04 - j2.50
2140
3.72 - j6.17
1.00 - j2.39
2160
3.59 - j6.59
0.96 - j2.28
2180
3.33 - j6.91
0.93 - j2.17
2200
2.98 - j7.10
0.89 - j2.05
2220
2.62 - j7.17
0.86 - j1.93
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
9