MRF7S21150HR3_09 Datasheet, PDF (8/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
10⁸
I_DQ = 1350 mA
f = 2140 MHz
17
10⁷
16
10⁶
15
V_DD = 24 V _{28 V 32 V}
14
0
100
200
300
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 44 W Avg., and η_D = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
0.001
0.0001
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA IQ Magnitude Clipping,
Single - Carrier Test Signal
−10
3.84 MHz
−20
Channel BW
−30
−40
−50
−60
−70
−80
−90
−ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
−110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21150HR3 MRF7S21150HSR3
8
RF Device Data
Freescale Semiconductor