MRF7S21150HR3_09 Datasheet, PDF (12/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Nov. 2007
Apr. 2009
Description
• Initial Release of Data Sheet
• Corrected ESD structures to reflect current testing results. Changed HBM from 3A to 1C, p. 2
• Updated Fig. 14, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal, to better represent
production test signal, p. 8
MRF7S21150HR3 MRF7S21150HSR3
12
RF Device Data
Freescale Semiconductor