MRF7S21080HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2040 MHz
Z_o = 25 Ω
Z_load
f = 2220 MHz
f = 2060 MHz
f = 2220 MHz
Z_source
f = 2060 MHz
V_DD = 28 Vdc, I_DQ = 800 mA, P_out = 22 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
7.16 - j11.074
4.403 - j6.809
2080 7.066 - j10.796 4.275 - j6.662
2100 6.954 - j10.526 4.147 - j6.515
2120 6.857 - j10.260 4.017 - j6.375
2140
6.745 - j9.980
3.889 - j6.233
2160
6.668 - j9.728
3.764 - j6.126
2180
6.588 - j9.462
3.642 - j6.016
2200
6.511 - j9.203
3.519 - j5.895
2220
6.403 - j8.892
3.401 - j5.774
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
9