MRF7S21080HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 800 mA
−20
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
−50 3rd Order
5th Order
−60
7th Order
−70
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−10
V_DD = 28 Vdc, P_out = 70 W (PEP), I_DQ = 800 mA
−20
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3−L
−30
IM3−U
−40
IM5−U
IM5−L
−50
IM7−U
IM7−L
−60
−70
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
70
Ideal
0
60
−1
50
−2 ^{−1 dB = 21.65 W}
40
−2 dB = 20.9 W
−3
30
−4
−3 dB = 39.9 W
20
−5 ^VDD ^{= 28 Vdc, I}DQ ^{= 800 mA}
f = 2140 MHz, Input Signal PAR = 7.5 dB
Actual
10
−6
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−20 _{VDD = 28 Vdc, IDQ = 800 mA, f = 2140 MHz, Single−Carrier}
W−CDMA, Input Signal PAR = 7.5 dB
−30 ^{ACPR @ ±5 MHz Offset in 3.84 MHz}
Integrated Bandwidth
−40 Uncorrected
Upper and Lower
−50
DPD Corrected
No Memory Correction
−60
DPD Corrected, with Memory Correction
−70
38 39 40 41 42 43 44 45 46 47 48 49
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
20
19 _{Gps TC = −30_C}
18
25_C
17
85_C
70
−30_C
60
25_C
85_C ⁵⁰
40
16
30
15
14 η_D
13
1
20
V_DD = 28 Vdc
I_DQ = 800 mA
10
f = 2140 MHz
0
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
7