MRF7S21080HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
19
34
18.8
η_D
33
18.6
32
18.4 _Gps
31
18.2
30
18
V_DD = 28 Vdc, P_out = 22 W (Avg.), I_DQ = 800 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
0
−4
17.8
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) −0.5
−8
17.6
−1
−12
17.4 PARC
IRL
17.2
−1.5
−16
−2
−20
17
−2.5
−24
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 22 Watts Avg.
18.2
45
18 ^ηD
44
17.8
43
17.6 ^Gps
42
17.4
17.2
V_DD = 28 Vdc, P_out = 40 W (Avg.), I_DQ = 800 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
17 ^{Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)}
41
−2
−4
−2.5
−8
16.8
−3
−12
16.6 ^PARC
IRL
16.4
−3.5
−16
−4
−20
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 40 Watts Avg.
20
19 ^{1000 mA}
I_DQ = 1200 mA
18 800 mA
17
600 mA
16
15 _{400 mA}
14
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
13
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
I_DQ = 400 mA
−30
600 mA
−40
1200 mA
1000 mA
−50
800 mA
−60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21080HR3 MRF7S21080HSR3
6
RF Device Data
Freescale Semiconductor