MRF7S19170HR3 Datasheet, PDF (9/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 2040 MHz
Z_load
f = 1880 MHz
Z_o = 10 Ω
Z_source
f = 2040 MHz
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1400 mA, P_out = 50 W CW Avg.
f
MHz
Z_source
W
Z_load
W
1880
1.338 - j7.859
0.967 - j2.868
1900
1.515 - j7.609
0.942 - j2.725
1920
1.743 - j7.432
0.920 - j2.585
1940
2.007 - j7.352
0.893 - j2.449
1960
2.249 - j7.393
0.865 - j2.313
1980
2.410 - j7.553
0.841 - j2.192
2000
2.411 - j7.788
0.820 - j2.073
2020
2.244 - j7.995
0.802 - j1.957
2040
1.966 - j8.101
0.779 - j1.834
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
9