MRF7S19170HR3 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1400 mA
f1 = 1955 MHz, f2 = 1965 MHz
−20 Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40 _{3rd Order}
−50 _{5th Order}
7th Order
−60
1
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
−5 ^{VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA}
−10
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−15
−20
−25
IM3−U
−30
IM3−L
−35
IM5−U
−40
−45
IM5−L
−50 ^IM7−U
−55
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
V_DD = 28 Vdc, I_DQ = 1400 mA
f = 1960 MHz, Input PAR = 7.5 dB
0
50
Ideal ₄₅
−1
40
−1 dB = 45 W
−2
35
−2 dB = 62 W
−3
30
−3 dB = 84 W
Actual
−4
25
30 35 40 45 50 55 60 65 70 75 80 85 90
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−20
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 1960 MHz
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
−30 5 MHz Offset in 3.84 MHz Integrated Bandwidth
Uncorrected, Upper and Lower
−40
DPD Corrected
No Memory Correction
−50
−60
DPD Corrected
with Memory Correction
−70
40 41 42 43 44 45 46 47 48 49 50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
18
17
G_ps
16
T_C = −30_C
25_C
85_C
90
−30_C
75
25_C
60
85_C
45
15
30
14
η_D
13
1
V_DD = 28 Vdc
15
I_DQ = 1400 mA
f = 1960 MHz
0
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S19170HR3 MRF7S19170HSR3
7