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MRF7S19170HR3 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
18
35
17 Gps
34
16
33
ηD
15
32
14
IRL
13
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
SingleâCarrier WâCDMA, 3.84 MHz Channel
31
â10
Bandwidth, PAR = 7.5 dB @ 0.01%
Probability (CCDF)
â1
â15
12
â1.5
â20
PARC
11
â2
â25
10
â2.5
â30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
18
44
17
43
ηD
16
42
15 Gps VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
41
14
SingleâCarrier WâCDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
40
â10
IRL
13
â3
â15
12 PARC
11
â3.4
â20
â3.8
â25
10
â4.2
â30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
19
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
18 IDQ = 2100 mA
1750 mA
17
1400 mA
16
1050 mA
700 mA
15
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â10
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoâTone Measurements, 10 MHz Tone Spacing
â20
â30
IDQ = 700 mA
â40
2100 mA
1050 mA
â50
1750 mA
1400 mA
â60
1
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S19170HR3 MRF7S19170HSR3
6
RF Device Data
Freescale Semiconductor
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