MRF6V14300HR3_10 Datasheet, PDF (9/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
Date
Sept. 2008
Oct. 2008
Nov. 2008
Apr. 2010
Description
• Initial Release of Data Sheet
• Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the
Functional Test table, p. 2
• Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5
• Added Fig. 12, MTTF versus Junction Temperature, p. 6
• Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula
footnote, p. 2
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Reporting of pulsed thermal data now shown using the Z_θJC symbol, p. 1
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 9
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
9