MRF6V14300HR3_10 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
• Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 150 mA, P_out =
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V14300H
Rev. 3, 4/2010
MRF6V14300HR3
MRF6V14300HSR3
1400 MHz, 330 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF6V14300HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
--0.5, +100
Vdc
V_GS
--6.0, +10
Vdc
T_stg
-- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Z_θJC
0.13
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
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