MRF6V14300HR3_10 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 10 Ω
f = 1400 MHz
Z_load
f = 1400 MHz
f = 1200 MHz
Z_source
f = 1200 MHz
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 330 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
1200
2.70 -- j4.10
2.97 -- j2.66
1300
4.93 -- j2.66
2.85 -- j2.40
1400
7.01 -- j2.87
3.17 -- j1.78
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 13. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
7