MRF6P3300HR3_06 Datasheet, PDF (9/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

f = 890 MHz
Z_o = 10 Ω
Z_load
f = 830 MHz
f = 890 MHz
Z_source
f = 830 MHz
V_DD = 32 Vdc, I_DQ = 1600 mA, P_out = 270 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
830
4.52 - j6.73
4.89 - j1.35
845
4.22 - j6.38
5.06 - j1.01
860
3.89 - j5.81
5.18 - j0.58
875
3.54 - j5.10
5.27 - j0.11
890
3.39 - j4.32
5.36 + j0.43
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 18. 820 - 900 MHz Narrowband Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
9