MRF6P3300HR3_06 Datasheet, PDF (16/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
30
−52
η_D
28
−53
26
−54
ACPR
24
−55
22
−56
20 ^{VDD = 32 Vdc, Pout = 60 W (Avg.)}
I_DQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation, 5 Symbols
18
400
500
600
700
G_ps
800
−57
−58
900
f, FREQUENCY (MHz)
Figure 37. Single - Carrier OFDM Broadband
Performance @ 60 Watts Avg.
24
f = 560 MHz
23
22 _{660 MHz}
21
20 ^{760 MHz}
V_DD = 32 Vdc, I_DQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
19 ^{860 MHz}
18
3
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 38. Single - Carrier DVBT OFDM Power
Gain versus Output Power
45
V_DD = 32 Vdc, I_DQ = 1600 mA
40 8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
35
f = 660 MHz
860 MHz
30
760 MHz
25
560 MHz
20
15
10
5
3
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 39. Single - Carrier DVBT OFDM Drain
Efficiency versus Output Power
−45
V_DD = 32 Vdc, I_DQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
−50
−55
f = 860 MHz
−60
760 MHz
−65
3
660 MHz
560 MHz
10
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 40. Single - Carrier DVBT OFDM ACPR
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
16
RF Device Data
Freescale Semiconductor