MRF6P3300HR3_06 Datasheet, PDF (5/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL NARROWBAND CHARACTERISTICS
21
η_D ³¹
20.5
29
20
G_ps ²⁷
19.5
V_DD = 32 Vdc, P_out = 60 W (Avg.)
25
I_DQ = 1600 mA, 8K Mode OFDM
19
64 QAM Data Carrier Modulation
IRL
−45
−5
5 Symbols
18.5
−50
−10
18
−55
−15
17.5
ACPR
−60
−20
17
−65
−25
820 830 840 850 860 870 880 890 900
f, FREQUENCY (MHz)
Figure 3. Single - Carrier OFDM Broadband Performance @ 60 Watts Avg.
21
V_DD = 32 Vdc, P_out = 120 W (Avg.)
20.5 ^{IDQ = 1600 mA, 8K Mode OFDM}
64 QAM Data Carrier
20 ^{Modulation, 5 Symbols}
G_ps
19.5
44
η_D ⁴²
40
38
19
−45
−5
18.5
−47
−10
18
ACPR
17.5
IRL
−49
−15
−51
−20
17
−53
−25
820 830 840 850 860 870 880 890 900
f, FREQUENCY (MHz)
Figure 4. Single - Carrier OFDM Broadband Performance @ 120 Watts Avg.
21.5
2400 mA
21
20.5 2000 mA
20 ^{1600 mA}
19.5 1200 mA
19
I_DQ = 800 mA
18.5
V_DD = 32 Vdc
18
f1 = 857 MHz, f2 = 863 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
17.5
5
10
100
600
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
−20
−30 _{IDQ = 2400 mA}
800 mA
−40
2000 mA
−50
1600 mA
1200 mA
−60
5
10
100
600
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
5