MRF6P21190HR6_10 Datasheet, PDF (9/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

PACKAGE DIMENSIONS
2X Q
A
A
bbb M T A M B M
G4
L
B
1
2
4X K
3
4
4X
D
aaa M T A M B M
B
(FLANGE)
ccc M T A M B M
N
(LID)
H
C
E
PIN 5
T
SEATING
PLANE
M
(INSULATOR)
bbb M T A M B M
ccc M T A M
R
(LID)
BM
F
S
(INSULATOR)
bbb M T A M B M
CASE 375D--05
ISSUE E
NI--1230
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
INCHES
DIM MIN MAX
A 1.615 1.625
B 0.395 0.405
C 0.150 0.200
D 0.455 0.465
E 0.062 0.066
F 0.004 0.007
G 1.400 BSC
H 0.082 0.090
K 0.117 0.137
L 0.540 BSC
M 1.219 1.241
N 1.218 1.242
Q 0.120 0.130
R 0.355 0.365
S 0.365 0.375
aaa 0.013 REF
bbb 0.010 REF
ccc 0.020 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
41.02 41.28
10.03 10.29
3.81 5.08
11.56 11.81
1.57 1.68
0.10 0.18
35.56 BSC
2.08 2.29
2.97 3.48
13.72 BSC
30.96 31.52
30.94 31.55
3.05 3.30
9.01 9.27
9.27 9.53
0.33 REF
0.25 REF
0.51 REF
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
9