MRF6P21190HR6_10 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
--15
V_DD = 28 Vdc, P_out = 190 W (PEP), I_DQ = 1900 mA
--20 _{Two--Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
--25
--30 3rd Order
--35
--40 ^{5th Order}
--45
--50 ^{7th Order}
--55
0.1
1
10
100
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
57
P3dB = 54.45 dBm (279 W)
Ideal
56
55 _{P1dB = 53.7 dBm (233 W)}
54
53
Actual
52
51
50
49
V_DD = 28 Vdc, I_DQ = 1900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
48
f = 2140 MHz
47
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
30
V_DD = 28 Vdc, I_DQ = 1900 mA
25
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
20 PAR = 8.5 dB @ 0.01% Probability (CCDF)
15
--30
η_D
IM3
--35
ACPR
--40
G_{ps --45}
10
--50
5
--55
0
--60
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
18
60
G_ps
15
50
12
40
9
30
6
20
3 _ηD
0
3
10
V_DD = 28 Vdc
I_DQ = 1900 mA
f = 2140 MHz
100
10
0
300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
16
V_DD = 28 V
14
12
10
8
I_DQ = 1900 mA
f = 2140 MHz
24 V
20 V
6
3
10
100
500
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6P21190HR6
6
RF Device Data
Freescale Semiconductor